| Model |
Analog current Output
Analog current Output |
JGWY3-30NV |
JGWY3-50NV |
JGWY3-100NV |
| Detection distance Center position |
30mm |
50mm |
100mm |
| Detection range |
±5mm |
±5mm |
±5mm |
| Light source |
Medium wavelength |
RedSemiconductor laser wavelength： 655 nm |
| Maximum Output power |
Max. output: 1mW |
| Laser grade |
ClassⅡ |
| Spot size*1 |
50μm |
70μm |
100μm |
| LineAccuracy |
0.1% of F.S. |
| Resolution*2 |
10μm |
30μm |
70μm |
| Reaction time |
1.5ms/5ms/10msCan switch |
| Temperature drift characteristics (reference value) |
±0.03% / ℃ of F.S |
| Control Output |
NPNOutputType
NPN open collector transistor
Maximum inflow current: 50mA
Applied voltage: between 30VDC and 0V
Residual power: 1.5V the following (inflow current 50mA
Leakage current: 0.1mA |
PNPOutput type
PNP open collector transistor
Maximum inflow current: 50mA
Applied voltage: between 30VDC and +V
Residual power: 1.5V the following (inflow current 50mA)
Leakage current: 0.1mA |
| OutputAction |
ON can be switched when the ON/ is not into the light |
| Short circuit protection |
Equipped with (automatic reset) |
| Power supply voltage |
12~24VDC ±10% 脉动P-P 10% |
| Analog voltage Output |
Output range: 0~5V (normal); 5.2V (ALERT) Output resistance 100Ω |
| External input |
NPNInput type |
No contact input
Input condition: +8~+VDC or open circuit (No) 0~+1.2VDC (valid)
Input impedance: About 10KΩ |
| PNPInput type |
No contact input
Input condition: 0~+0.6VDC or open circuit (No) +4~+VDC (valid)
Input impedance: about 10kΩ |
| Pollution degree |
2 |
| Use elevation |
2000m以下 |
| Protective structure |
IP67 |
| Using ambient temperature |
-10~45℃ / 35~85% RH NoFreeze / store： -20~60℃ |
| Environmental illumination |
Lncandescent lamp: the light illumination is below 3000Lux |
| Texture of material |
Shell: aluminum / casting / front cover: acrylic base |
